The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
May. 09, 2008
Yongxun Liu, Tsukuba, JP;
Takashi Matsukawa, Tsukuba, JP;
Meishoku Masahara, Tsukuba, JP;
Kazuhiko Endo, Tsukuba, JP;
Shinichi Ouchi, Tsukuba, JP;
Yongxun Liu, Tsukuba, JP;
Takashi Matsukawa, Tsukuba, JP;
Meishoku Masahara, Tsukuba, JP;
Kazuhiko Endo, Tsukuba, JP;
Shinichi Ouchi, Tsukuba, JP;
Abstract
A field-effect transistor comprising a movable gate electrode that suppresses a leakage current from the gate electrode, and has a large current drivability and a low leakage current between a source and a drain. The field-effect transistor comprises: an insulating substrate; a semiconductor layer of triangle cross-sectional shape formed on the insulating substrate, having a gate insulation film on a surface, and forming a channel in a lateral direction; fixed electrodes that are arranged adjacent to both sides of the semiconductor layer and in parallel to the semiconductor layer, each of the electrodes having an insulation film on a surface; a source/drain formed at the end part of the semiconductor layer; and the movable gate electrode formed above the semiconductor layer and the fixed electrodes with a gap.