The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jan. 22, 2009
Ji-su Ahn, Suwon-si, KR;
Byoung-keon Park, Suwon-si, KR;
Tae-hoon Yang, Suwon-si, KR;
Jin-wook Seo, Suwon-si, KR;
Kil-won Lee, Suwon-si, KR;
Ki-yong Lee, Suwon-si, KR;
Sung-chul Kim, Suwon-si, KR;
Ji-Su Ahn, Suwon-si, KR;
Byoung-Keon Park, Suwon-si, KR;
Tae-Hoon Yang, Suwon-si, KR;
Jin-Wook Seo, Suwon-si, KR;
Kil-Won Lee, Suwon-si, KR;
Ki-Yong Lee, Suwon-si, KR;
Sung-Chul Kim, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.