The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2011

Filed:

Dec. 09, 2008
Applicants:

Masanobu Ikeda, Kanagawa, JP;

Ryoichi Ito, Kanagawa, JP;

Daisuke Takama, Kanagawa, JP;

Kenta Seki, Kanagawa, JP;

Natsuki Otani, Kanagawa, JP;

Inventors:

Masanobu Ikeda, Kanagawa, JP;

Ryoichi Ito, Kanagawa, JP;

Daisuke Takama, Kanagawa, JP;

Kenta Seki, Kanagawa, JP;

Natsuki Otani, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other.


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