The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jul. 07, 2008
Satoshi Tomimatsu, Kokubunji, JP;
Kaoru Umemura, Musashino, JP;
Yuichi Madokoro, Kokubunji, JP;
Yoshimi Kawanami, Kokubunji, JP;
Yasunori Doi, Kokubunji, JP;
Satoshi Tomimatsu, Kokubunji, JP;
Kaoru Umemura, Musashino, JP;
Yuichi Madokoro, Kokubunji, JP;
Yoshimi Kawanami, Kokubunji, JP;
Yasunori Doi, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition.