The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Mar. 04, 2009
Kazufumi Azuma, Yokohama, JP;
Hajime Shirai, Saitama, JP;
Kazufumi Azuma, Yokohama, JP;
Hajime Shirai, Saitama, JP;
Advanced LCD Technologies Development Center Co., Ltd., Kawasaki-shi, JP;
Abstract
A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile