The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jun. 05, 2008
Sang Hyun OH, Kyeongki-do, KR;
Sang Hyun Oh, Kyeongki-do, KR;
Hynix Semiconductor Inc., Icheon-si, Kyoungki-do, KR;
Abstract
A semiconductor memory devices and a method of fabricating the same includes sequentially stacking a tunnel insulating layer, a first nano-grain film, a conductive layer for a floating gate, and a second nano-grain film over a semiconductor substrate, forming a trench by etching the second nano-grain film, the conductive layer for the floating gate, the first nano-grain film, the tunnel insulating layer, and the semiconductor substrate, gap-filling the trench with an insulating layer, thus forming an isolation layer, and forming a third nano-grain film on sidewalls of the conductive layer for the floating gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile