The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jun. 04, 2004
Applicants:
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Inventors:
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Assignee:
The Board of Trustees of The University of Illinois, Urbana, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for increasing the speed of a bipolar transistor, includes the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.