Method for forming a semiconductor light-emitting device

Abstract

A semiconductor light-emitting device with a new layer structure is disclosed, where the current leaking path is not caused to enhance the current injection efficiency within the active layer. The device provides a mesa structure containing active layer and a p-type lower cladding layer on a p-type substrate and a burying layer doped with iron (Fe) to bury the mesa structure, where the burying layer shows a semi-insulating characteristic. The device also provides an n-type blocking layer arranged so as to cover at least a portion of the p-type buffer lower within the mesa structure. The n-type blocking layer prevents the current leaking from the burying layer to the p-type buffer layer, and the semi-insulating burying layer that covers the rest portion of the mesa structure not covered by the n-type blocking layer prevents the current leaking from the n-type blocking layer to the n-type cladding layer within the mesa structure.