The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2011

Filed:

Dec. 11, 2008
Applicants:

Yoshihiro Minami, Yokosuka, JP;

Ryo Fukuda, Yokohama, JP;

Takeshi Hamamoto, Yokohama, JP;

Inventors:

Yoshihiro Minami, Yokosuka, JP;

Ryo Fukuda, Yokohama, JP;

Takeshi Hamamoto, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

This disclosure concerns a semiconductor memory device including bit lines; word lines; semiconductor layers arranged to correspond to crosspoints of the bit lines and the word lines; bit line contacts connecting between a first surface region and the bit lines, the first surface region being a part of a surface region of the semiconductor layers directed to the word lines and the bit lines; and a word-line insulating film formed on a second surface region adjacent to the first surface region, the second surface region being a part of out of the surface region, the word-line insulating film electrically insulating the semiconductor layer and the word line, wherein the semiconductor layer, the word line and the word-line insulating film form a capacitor, and when a potential difference is given between the word line and the bit line, the word-line insulating film is broken in order to store data.


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