The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2011

Filed:

Dec. 26, 2006
Applicants:

Mitsuo Kato, Hiroshima, JP;

Shigenari Horie, Hiroshima, JP;

Tatsufumi Aoi, Hiroshima, JP;

Masaki Kawano, Hiroshima, JP;

Yoshitaka Tsumoto, Hiroshima, JP;

Hiroaki Ogasawara, Hiroshima, JP;

Toshiro Kobayashi, Hiroshima, JP;

Inventors:

Mitsuo Kato, Hiroshima, JP;

Shigenari Horie, Hiroshima, JP;

Tatsufumi Aoi, Hiroshima, JP;

Masaki Kawano, Hiroshima, JP;

Yoshitaka Tsumoto, Hiroshima, JP;

Hiroaki Ogasawara, Hiroshima, JP;

Toshiro Kobayashi, Hiroshima, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H02N 13/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object is providing an electrostatic attraction apparatus and an attracting/releasing method capable of reliably attracting and quickly releasing a glass substrate. An attraction force for attracting a glass substrate is obtained according to the physical properties of the glass substrate. In addition to obtaining an attraction voltage (V(t)) required for obtaining the attraction force, a holding voltage (V(t)) for holding an attraction state and a release voltage (V(t)) for releasing the glass substrate are also obtained (Sto S). Attraction time period (t) is actually measured and if this measured time is different from a preset attraction time (t), the holding voltage (V(t)) and the release voltage (V(t)) are recalculated according to the actually measured attraction time period (t) (Sto S).


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