The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
May. 01, 2009
Masaki Kojima, Shiga, JP;
Masaki Kojima, Shiga, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A semiconductor deviceincludes an output MOS transistor M, a sense MOS transistor M, a voltage conversion circuitthat converts a sense current of the sense MOS transistor Minto a sense voltage, and control MOS transistor Mhaving a gate and a source which receive the sense voltage therebetween and a drain connected to a gate of the output MOS transistor M. The voltage conversion circuitincludes a first MOS transistor Mdiode-connected and a second MOS transistor Mconnected in series to the first transistor M. A gate of the second transistor Mis connected to a node between a gate control circuitand a resistor Rwhich is connected to the gate of the output MOS transistor M. A variation in threshold voltage caused by characteristic variation of the control MOS transistor Mcauses a variation in output current limiting value, but the threshold voltage of the first MOS transistor Mdiode-connected varies similarly, whereby the variation in threshold voltage caused by characteristic variation of the control MOS transistor Mis cancelled. As a result, the variation in output current limiting value is suppressed.