The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Feb. 11, 2010
Applicant:
Anatoli Pukhovski, Ottawa, CA;
Inventor:
Anatoli Pukhovski, Ottawa, CA;
Assignee:
SiGe Semiconductor Inc., Ottawa, Ontario, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A circuit and method are provided for reducing dynamic EVM of a power amplifier (PA) used for RF communication. A temperature dependent boost bias signal is applied to the bias input port of amplifier circuitry of the PA in dependence upon a temperature of the amplifier circuitry to compensate for transience in the gain or phase response of the PA while components of the PA is differentially warming-up, advantageously taking into account an actual temperature of the amplifier circuitry.
Pukhovski, Anatoli. (2011). Circuit and method of temperature dependent power amplifier biasing (U.S. Patent No. 7994862). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7994862
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile