The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7994826 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 09, 2011

Filed:

Jan. 19, 2007
Applicants:

Katsumi Ishikawa, Hitachinaka, JP;

Hideki Miyazaki, Hitachi, JP;

Masahiro Nagasu, Hitachinaka, JP;

Yasuhiko Kono, Naka, JP;

Inventors:

Katsumi Ishikawa, Hitachinaka, JP;

Hideki Miyazaki, Hitachi, JP;

Masahiro Nagasu, Hitachinaka, JP;

Yasuhiko Kono, Naka, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.


Find Patent Forward Citations

Ishikawa, Katsumi. (2011). Drive circuit for power semiconductor switching device (U.S. Patent No. 7994826). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7994826

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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