The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jul. 07, 2008
Junli Wang, Kanagawa, JP;
Tomoyuki Hirano, Kanagawa, JP;
Toyotaka Kataoka, Kanagawa, JP;
Yoshiya Hagimoto, Kanagawa, JP;
Junli Wang, Kanagawa, JP;
Tomoyuki Hirano, Kanagawa, JP;
Toyotaka Kataoka, Kanagawa, JP;
Yoshiya Hagimoto, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.