The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2011

Filed:

Nov. 05, 2009
Applicants:

Ibrahim Abdullah Al-homoudi, Dearborn Heights, MI (US);

Golam Newaz, Ann Arbor, MI (US);

Gregory W. Auner, Livonia, MI (US);

Inventors:

Ibrahim Abdullah Al-Homoudi, Dearborn Heights, MI (US);

Golam Newaz, Ann Arbor, MI (US);

Gregory W. Auner, Livonia, MI (US);

Assignee:

Wayne State University, Detroit, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin-film metal-oxide compound includes a titanium dioxide layer having a thickness of about 100 to 1000 nanometers. The titanium dioxide layer has a single-phase anatase structure. The titanium dioxide layer is directly disposed on a substrate comprised of glass, sapphire, or silicon. A solar cell includes a backing layer, a p-n junction layer, a metal-oxide layer, a top electrical layer and a contact layer. The backing layer includes a p-type semiconductor material. The p-n junction layer has a first side disposed on a front side of the backing layer. The metal-oxide layer includes an n-type titanium dioxide film having a thickness in the range of about 100 to about 1000 nanometers. The metal-oxide layer is disposed on a second side of the p-n junction layer. The top electrical layer is disposed on the metal-oxide layer, and the contact layer is disposed on a back side of the backing layer.


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