The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jan. 26, 2007
Applicant:
Takeshi Nakata, Tokyo, JP;
Inventor:
Takeshi Nakata, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/07 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even at the time of an intensive light input, and exhibits high resistance to light inputs. The semiconductor light receiving device includes light absorption layers () formed on an InP semiconductor substrate () wherein a buffer layer () containing a quaternary compositional material is formed between the InP semiconductor substrate () and the light absorption layers ().