The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jul. 02, 2008
Jer-chyi Wang, Taoyuan County, TW;
Tieh-chiang Wu, I-Lan Hsien, TW;
Chung-yuan Lee, Tao-Yuan, TW;
Jeng-ping Lin, Tao-Yuan, TW;
Jer-Chyi Wang, Taoyuan County, TW;
Tieh-Chiang Wu, I-Lan Hsien, TW;
Chung-Yuan Lee, Tao-Yuan, TW;
Jeng-Ping Lin, Tao-Yuan, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A recessed-gate transistor device includes a gate electrode embedded in a gate trench formed in a semiconductor substrate, wherein the gate trench includes a vertical sidewall and a U-shaped bottom. A source region is provided at one side of the gate trench within the semiconductor substrate. A drain region is provided at the other side thereof. An asymmetric gate dielectric layer is formed between the gate electrode and the semiconductor substrate. The asymmetric gate dielectric layer has a first thickness between the gate electrode and the drain region and a second thickness between the gate electrode and the source region, wherein the first thickness is thicker than the second thickness.