The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Aug. 20, 2008
Yong Sun Yoon, Daejeon, KR;
Kun Sik Park, Daejeon, KR;
Jong Moon Park, Daejeon, KR;
BO Woo Kim, Daejeon, KR;
Jin Yeong Kang, Daejeon, KR;
Yong Sun Yoon, Daejeon, KR;
Kun Sik Park, Daejeon, KR;
Jong Moon Park, Daejeon, KR;
Bo Woo Kim, Daejeon, KR;
Jin Yeong Kang, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A complementary metal-oxide semiconductor (CMOS)-based planar type avalanche photo diode (APD) using a silicon epitaxial layer and a method of manufacturing the APD, the photo diode including: a substrate; a well layer of a first conductivity type formed in the substrate; an avalanche embedded junction formed in the well layer of the first conductivity type by low energy ion implantation; the silicon epitaxial layer formed in the avalanche embedded junction; a doping area of a second conductivity type opposite to the first conductive type, formed from a portion of a surface of the well layer of the first conductivity type in the avalanche embedded junction and forming a p-n junction; positive and negative electrodes formed on the doping area of the second conductivity type and the well layer of the first conductivity type separated from the doping area of the second conductivity type, respectively; and an oxide layer formed on an overall surface excluding a window where the positive and negative electrodes are formed.