The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Aug. 02, 2010
Joon-hoo Choi, Seoul, KR;
In-su Joo, Seongnam-si, KR;
Beom-rak Choi, Seoul, KR;
Jong-moo Huh, Gyeonggi-do, KR;
Joon-Hoo Choi, Seoul, KR;
In-Su Joo, Seongnam-si, KR;
Beom-Rak Choi, Seoul, KR;
Jong-Moo Huh, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.