The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Mar. 28, 2008
Cyrus Bamji, Fremont, CA (US);
Hakan Yalcin, Fremont, CA (US);
Cyrus Bamji, Fremont, CA (US);
Hakan Yalcin, Fremont, CA (US);
Microsoft Corporation, Redmond, WA (US);
Abstract
TOF and color sensing detector structures have x-axis spaced-apart y-axis extending finger-shaped gate structures with adjacent source collection regions. X-dimension structures are smaller than y-dimension structure and govern performance, characterized by high x-axis electric fields and rapid charge movement, contrasted with lower y-axis electric fields and slower charge movement. Preferably a potential barrier is implanted between adjacent gates and a bias gate is formed intermediate a gate and associated source region. For color detection sensor devices, gate bias voltage signals V, Vcoupled to the finger-shaped gate structures are high during sub-integration periods tand are low during a shorter charge movement period t. In one embodiment, alternate finger-shaped gate structures preferable have different high magnitude sub-integration period voltages that enable detected ambient optical energy of different wavelengths to be discerned. Resultant detector structures can be operated at the more extreme gate voltages that are desirable for high performance.