The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jan. 30, 2008
Hisaya Sakai, Kawasaki, JP;
Noriyoshi Shimizu, Kawasaki, JP;
Hisaya Sakai, Kawasaki, JP;
Noriyoshi Shimizu, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor apparatus which includes the steps of forming a via hole and a wire trench reaching an underlying wire in an interlayer insulation film formed on the underlying wire, forming an diffusion barrier film on said underlying wire exposed through said via hole, on an inner wall of said via hole and on an inner wall of said wire trench, forming a seed layer on said underlying wire and on said diffusion barrier film formed on the inner wall of said via hole and the inner wall of said wire trench while concurrently said diffusion barrier film deposited on the bottom of said via hole is being etched, and forming metal wire in said via hole and in said wire trench.