The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jun. 04, 2008
Takuya Futase, Tokyo, JP;
Takuya Futase, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a film stack structure and a metal film filled, via the barrier metal film, in a connecting hole opened in an insulating film. The manufacturing method of a semiconductor device includes the steps of: forming a contact hole and exposing a nickel silicide layer from the bottom of the contact hole; forming a thermal reaction Ti film by a thermal reaction using a TiClgas, forming a plasma reaction Ti film by a plasma reaction using a TiClgas, carrying out plasma treatment with an Hgas to decrease the chlorine concentration of the plasma reaction Ti film and at the same time to reduce an oxide film on the surface of the nickel silicide layer; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film and at the same time reducing the oxide film on the surface of the nickel silicide layer by thermal nitridation treatment with an NHgas and plasma treatment with an NHgas.