The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jun. 20, 2007
Masahiro Komuro, Kanagawa, JP;
Masahiro Komuro, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A through electrode that offers excellent performance and can be manufactured through a simple process is to be provided. In a silicon spacer including a silicon substrate, an insulative thick film is provided so as to be in contact with a surface of the silicon substrate and a side wall of a through hole penetrating the silicon substrate. An upper surface of a through plug is retreated to a lower level than an interface between the silicon substrate and the insulative thick film, thus to define a height gap. A first bump is then formed, which is connected to the retreated surface of the through plug and has a larger diameter than that of the through plug at the upper surface of the insulative thick film.