The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2011

Filed:

Jan. 22, 2009
Applicants:

Chung-wei Cheng, Miaoli County, TW;

Costas P. Grigoropoulos, Berkeley, CA (US);

David Jen Hwang, El Cerrito, CA (US);

Moosung Kim, Emeryville, CA (US);

Inventors:

Chung-Wei Cheng, Miaoli County, TW;

Costas P. Grigoropoulos, Berkeley, CA (US);

David Jen Hwang, El Cerrito, CA (US);

Moosung Kim, Emeryville, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.


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