The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2011

Filed:

Jul. 25, 2007
Applicants:

Hidekazu Miyairi, Kanagawa, JP;

Hironobu Shoji, Tokyo, JP;

Akihisa Shimomura, Kanagawa, JP;

Eiji Higa, Kanagawa, JP;

Tomoaki Moriwaka, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Inventors:

Hidekazu Miyairi, Kanagawa, JP;

Hironobu Shoji, Tokyo, JP;

Akihisa Shimomura, Kanagawa, JP;

Eiji Higa, Kanagawa, JP;

Tomoaki Moriwaka, Kanagawa, JP;

Shunpei Yamazaki, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.


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