The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Jul. 01, 2009
Applicant:
Kazuyoshi Shiba, Tokyo, JP;
Inventor:
Kazuyoshi Shiba, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
To improve characteristics of a semiconductor device having a nonvolatile memory. There is provided a semiconductor device having a nonvolatile memory cell that performs memory operations by transferring a charge to/from a charge storage film, wherein the nonvolatile memory cell includes a p well formed in a principal plane of a silicon substrate, and a memory gate electrode formed over the principal plane across the charge storage film, and wherein a memory channel region located beneath the charge storage film of the principal plane of the silicon substrate contains fluorine.