The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7993987 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 09, 2011

Filed:

Oct. 14, 2010
Applicants:

Randolph F. Knarr, Putnam Valley, NY (US);

Christian Lavoie, Pleasantville, NY (US);

Ahmet S. Ozcan, Pleasantville, NY (US);

Filippos Papadatos, Wappingers Falls, NY (US);

Inventors:

Randolph F. Knarr, Putnam Valley, NY (US);

Christian Lavoie, Pleasantville, NY (US);

Ahmet S. Ozcan, Pleasantville, NY (US);

Filippos Papadatos, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method includes providing a substrate including a non-insulative, silicon-including region for silicidation, the substrate including one or more contaminants at a top surface thereof. A getter layer is deposited over the non-insulative, silicon-including region, the getter layer reacting with at least one of the one or more contaminants in the non-insulative, silicon-including region at approximately room temperature. The getter layer is removed, and siliciding of the non-insulative, silicon-including region is performed.


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