The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7993455 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 09, 2011

Filed:

Aug. 17, 2004
Applicants:

Junichirou Nakashima, Shunan, JP;

Hiroyuki Oda, Shunan, JP;

Inventors:

Junichirou Nakashima, Shunan, JP;

Hiroyuki Oda, Shunan, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A polycrystalline silicon production apparatus is provided whereby when deposited silicon is caused to drip down into an underlying collection part by heating the reaction tube inner surface at a temperature equal to or above the melting point of silicon, the silicon melt can be prevented from solidifying at a lower end portion of the reaction tube due to temperature lowering at the lower end portion. When a reaction tube is heated with a high frequency heating coil, the temperature lowering at a lower end portion of the reaction tube is prevented through temperature lowering prevention means which may be an infrared device capable of heating the outer periphery of the lower end portion by means of infrared rays, or which may be a lower end coil that is constituted by a coil near the lower end of the high frequency heating coil and has an increased heating intensity relative to an upper coil.


Find Patent Forward Citations

Nakashima, Junichirou. (2011). Silicon manufacturing apparatus (U.S. Patent No. 7993455). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7993455

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