The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Apr. 16, 2009
Kyung Pil Hwang, Seoul, KR;
Hyung Seok Kim, Seoul, KR;
Keum Hwan Noh, Seoul, KR;
Ju IN Kim, Incheon-si, KR;
Min Kyu Lee, Icheon-si, KR;
Seok Jin Joo, Seoul, KR;
Sook Kyung Kim, Icheon-si, KR;
Kyung Pil Hwang, Seoul, KR;
Hyung Seok Kim, Seoul, KR;
Keum Hwan Noh, Seoul, KR;
Ju In Kim, Incheon-si, KR;
Min Kyu Lee, Icheon-si, KR;
Seok Jin Joo, Seoul, KR;
Sook Kyung Kim, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.