The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Sep. 10, 2009
Kyung-min Park, Seoul, KR;
Seong-jun Ahn, Seoul, KR;
Kyung-min Park, Seoul, KR;
Seong-jun Ahn, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A Least Significant Bit (LSB) page recovery method used in a multi-level cell (MLC) flash memory device includes setting first through nLSB page groups (n being a natural number that is larger than 2) comprising at least two LSB pages from among the LSB pages included in the MLC flash memory, programming the first through xLSB pages (x is a natural number that is larger than 2) included in an iLSB page group (i is a natural number that is smaller than n), generating and storing an iLSB parity page for the first through xLSB pages, programming first through xMSB pages which correspond to one LSB page from among the first through xLSB pages, and recovering a jLSB page, which are paired with a jMSB page, using the iLSB parity page corresponding to the iLSB page group, when a power supply to the MLC flash memory is stopped during the programming of the jMSB page (j is a natural number that is smaller than x).