The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Sep. 16, 2008
Ryoichi Nakamura, Kanagawa, JP;
Ryoichi Nakamura, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed herein is a semiconductor memory device including a plurality of memory cells including first and second inverters each having first and second driver transistors and first and second load transistors and including first and second memory node, and first and second transfer transistors. The of the first and second transfer transistors is connected to each of the first and memory nodes respectively. The memory cell is connected to a bit line and complementary bit line via the first and second transfer transistors respectively wherein a supply voltage applied to the bit line and the complementary bit line is lower than a supply voltage applied to the load transistors, and at least a memory-node-side end of a gate insulating film of the first driver transistor, second driver transistor, first load transistor, and the second load transistor have a thickness larger than a thickness of a gate insulating film of the other part.