The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Oct. 17, 2007
Narakazu Shimomura, Gojo, JP;
Toshio Mimoto, Nara, JP;
Koichi Kamiyama, Nara, JP;
Sharp Kabushiki Kaihsa, Osaka, JP;
Abstract
In one embodiment of the present invention, an electrostatic discharge withstand voltage evaluating device includes: an application device, including a first connecting section and a second connecting section, for supplying pulse electric charge, the first connecting section being connectable to one or whole terminal (s) of one of input terminals and output terminals of a source driver, and supplying electric charge to the source driver, the second connecting section being connectable to one or whole terminal(s) of the other one of the input terminals and the output terminals, and enabling said one or whole terminal(s) of the other one of the input terminals and the output terminals to be grounded; and a common connecting section being connectable to the plurality of output terminals of the source driver, and causing the plurality of output terminals to be electrically connected to each other, wherein the output terminals of the source driver are connected, via the common connecting section, to one of the first connecting section and the second connecting section. Therefore, the electrostatic discharge withstand voltage evaluating device can more successfully recreate how a failure occurs in a semiconductor device and can evaluate an electrostatic discharge breakdown withstand of the semiconductor device.