The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Oct. 16, 2008
Wataru Saito, Kawasaki, JP;
Syotaro Ono, Yokohama, JP;
Masaru Izumisawa, Himeji, JP;
Yasuto Sumi, Himeji, JP;
Hiroshi Ohta, Fuchu, JP;
Wataru Sekine, Himeji, JP;
Nana Hatano, Yokohama, JP;
Wataru Saito, Kawasaki, JP;
Syotaro Ono, Yokohama, JP;
Masaru Izumisawa, Himeji, JP;
Yasuto Sumi, Himeji, JP;
Hiroshi Ohta, Fuchu, JP;
Wataru Sekine, Himeji, JP;
Nana Hatano, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes an n+ type semiconductor substrateand a super junction region that has, on the top of the substrate, an n and p type pillar regionsandprovided alternately. The device also includes, in the top surface of the super junction region, a p type base regionand an n type source layer. The device also includes a gate electrodeon the regionand layervia a gate-insulating film, a drain electrodeon the bottom of the substrate, and a source electrodeon the top of the substrate. In the top surface of the super junction region in the terminal region, a RESURF regionis formed. The RESURF region has a comb-like planar shape with repeatedly-formed teeth having tips facing the end portion of the terminal region.