The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Apr. 29, 2009
Applicants:
Huaxiang Yin, Yongin-si, KR;
Ihun Song, Seongnam-si, KR;
Sunil Kim, Yongin-si, KR;
Youngsoo Park, Yongin-si, KR;
Inventors:
Huaxiang Yin, Yongin-si, KR;
Ihun Song, Seongnam-si, KR;
Sunil Kim, Yongin-si, KR;
Youngsoo Park, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor, an inverter including the transistor, and methods of manufacturing the inverter and the transistor. A gate insulating layer of the transistor has a charge trap region. A threshold voltage may be moved in a positive (+) direction by trapping charges in the charge trap region. The transistor may be an enhancement mode oxide thin-film transistor (TFT) and may be used as an element of the inverter.