The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Feb. 07, 2006
Applicants:
Theodore Letavic, Putnam Valley, NY (US);
John Petruzzello, Carmel, NY (US);
Inventors:
Theodore Letavic, Putnam Valley, NY (US);
John Petruzzello, Carmel, NY (US);
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A vertically oriented self terminating semiconductor device such as a discrete trench MOS device () that includes a cylindrical drift region () that extend downward from a surface region to a substrate () and a dielectric region () that exponentially tapers outward from the cylindrical drift region as the drift region approaches the substrate. A field plate electrode () is disposed on the dielectric region. Alternatively, the gate electrode () may be disposed on the dielectric region, optionally with an underlying field plate electrode ().