The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Nov. 24, 2008
Wibo Van Noort, Westbrook, ME (US);
Theodore James Letavic, Putnam Valley, NY (US);
Francis Zaato, Fishkill, NY (US);
Charudatta Mandhare, Fishkill, NY (US);
Wibo Van Noort, Westbrook, ME (US);
Theodore James Letavic, Putnam Valley, NY (US);
Francis Zaato, Fishkill, NY (US);
Charudatta Mandhare, Fishkill, NY (US);
NXP B.V., Eindhoven, NL;
Abstract
A BiCMOS substrate includes a bipolar area having a buried carrier layer, and a deep trench isolation (DTI) trench extending into the buried carrier layer to form a surface well implant above a buried well implant within the DTI trench, the buried well implant being the buried carrier layer portion within the DTI trench. A floating gate is disposed on the carrier well. Optionally, a high voltage control gate is formed of a stack of the buried well implant and the surface well implant within the DTI trench. Optionally, a poly layer formed of a bipolar process base poly layer is disposed on the floating gate. Optionally, a shallow well isolation region is formed on the substrate, a floating gate is disposed on the shallow well region, and an overlaying control gate, formed of a bipolar process base poly, is disposed above the floating gate.