Mos varactor and fabricating method of the same

Abstract

A MOS varactor for use in circuits and elements of a millimeter-wave frequency band, which is capable of reducing series resistance and enhancing a Q-factor by using a plurality of island-like gates seated in a well region of a substrate and gate contacts directly over the gates, includes: gate insulating layers arranged at equal intervals in the form of a (n×m) matrix, and a gate electrode placed on the gate insulating layers in a well region of a substrate; a gate contact which contacts the gate electrode; a first metal wire, which is electrically connected to the gate contact; source/drain contacts arranged at equal intervals in a matrix to form apexes of a square centered at the gate electrode and contact a doping region except for the bottom of the gate insulating layers; and a second metal wire, which is electrically connected to the source/drain contacts.