The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Aug. 28, 2008
John Edward Barth, Jr., Williston, VT (US);
Kerry Bernstein, Underhill, VT (US);
Ethan Harrison Cannon, Essex Junction, VT (US);
Francis Roger White, Essex Junction, VT (US);
John Edward Barth, Jr., Williston, VT (US);
Kerry Bernstein, Underhill, VT (US);
Ethan Harrison Cannon, Essex Junction, VT (US);
Francis Roger White, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes an active semiconductor layer, a semiconductor device having a gate disposed on top of the active semiconductor layer, and source and drain regions and a body/channel region disposed within the active semiconductor layer, an insulator layer having a first and second side, the first side being adjacent to the active semiconductor layer, a substrate disposed adjacent to the second side of the insulator layer, a deep trench capacitor disposed under the body/channel region of the semiconductor device. The deep trench capacitor electrically connects with and contacts the body/channel region of the semiconductor device, and is located adjacent to the gate of the semiconductor device. The semiconductor structure increases a critical charge Qcrit, thereby reducing a soft error rate (SER) of the semiconductor device.