The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Feb. 27, 2009
Hooman Kazemi, Thousand Oaks, CA (US);
Chanh Nguyen, Calabasas, CA (US);
Berinder Brar, Newbury Park, CA (US);
Hooman Kazemi, Thousand Oaks, CA (US);
Chanh Nguyen, Calabasas, CA (US);
Berinder Brar, Newbury Park, CA (US);
Teledyne Scientific & Imaging, LLC, Thousand Oaks, CA (US);
Abstract
The disclosure relates to a zero-bias heterojunction diode detector with varying impedance. The detector includes a substrate supporting a Schottky structure and an Ohmic contact layer. A metallic contact layer is formed over the Ohmic layer. The Schottky structure comprises a plurality of barrier layers and each of the plurality of barriers layers includes a first material and a second material. In one embodiment, the composition percentage of the second material in each of the barrier layers increases among the plurality of barrier layers from the substrate to the metal layer in order to provide a graded periodicity for the Schottky structure.