The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Apr. 23, 2010
Rafael I. Aldaz, Pleasanton, CA (US);
James G. Neff, Felton, CA (US);
Rafael I. Aldaz, Pleasanton, CA (US);
James G. Neff, Felton, CA (US);
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Philips Lumileds Lighting Company, LLC, San Jose, CA (US);
Abstract
A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material