The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Jan. 26, 2011
Tetsuya Hayashi, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Yoshio Shimoida, Yokosuka, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Tetsuya Hayashi, Yokosuka, JP;
Masakatsu Hoshi, Yokohama, JP;
Yoshio Shimoida, Yokosuka, JP;
Hideaki Tanaka, Yokohama, JP;
Shigeharu Yamagami, Yokohama, JP;
Nissan Motor Co., Ltd., Yokohama-shi, JP;
Abstract
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.