The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Jul. 12, 2010
Byung Soo Eun, Seoul, KR;
Byung Soo Eun, Seoul, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a storage node electrode in a semiconductor device includes: performing a primary high density plasma (HDP) process to form a first HDP oxide film over an etch stop film; performing a secondary HDP process to form a second HDP oxide film on the first HDP oxide film; forming a support film over the second HDP oxide film; performing a tertiary HDP process to form a third HDP oxide film over the support film; forming a storage node electrode on an exposed surface of the storage node contact hole; partially removing the third HDP oxide film and the support film so that a support pattern supporting the storage node electrode is formed; and exposing an outer surface of the storage node electrode by removing the second HDP oxide film and the first HDP oxide film.