The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
May. 18, 2009
Hideki Hakuma, Tokyo, JP;
Yoshiaki Tanaka, Tokyo, JP;
Satoru Kuriyagawa, Tokyo, JP;
Showa Shell Sekiyu K.K., Tokyo, JP;
Abstract
In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer () is formed on a substrate (). Then, a p-type CIS-based light absorbing layer () is formed on backside electrode layer (), and then an n-type transparent and electroconductive film () is formed on this p-type CIS-based light absorbing layer (). At this time, the backside electrode layer () is constituted by forming a first electrode layer () using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer () using the backside electrode material that does not substantially contain the alkali metal.