The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
May. 12, 2009
Craig Edward Murphy, Teddington, GB;
Salvatore Cina, Rennes, FR;
Timothy Butler, Cambridge, GB;
Matthew Roberts, Cambridge, GB;
Nalinkumar Lallubhai Patel, Cambridge, GB;
Clare Louise Foden, Cambridge, GB;
Mark Levence Leadbeater, Depden, GB;
Daniel Alan Forsythe, Cambridge, GB;
Robert Sidney Archer, Essex, GB;
Nicholas DE Brissac Baynes, Worksop, GB;
Nathan Luke Phillips, Cambridge, GB;
Anil Raj Duggal, Niskayuna, NY (US);
Jie Liu, Niskayuna, NY (US);
Craig Edward Murphy, Teddington, GB;
Salvatore Cina, Rennes, FR;
Timothy Butler, Cambridge, GB;
Matthew Roberts, Cambridge, GB;
Nalinkumar Lallubhai Patel, Cambridge, GB;
Clare Louise Foden, Cambridge, GB;
Mark Levence Leadbeater, Depden, GB;
Daniel Alan Forsythe, Cambridge, GB;
Robert Sidney Archer, Essex, GB;
Nicholas de Brissac Baynes, Worksop, GB;
Nathan Luke Phillips, Cambridge, GB;
Anil Raj Duggal, Niskayuna, NY (US);
Jie Liu, Niskayuna, NY (US);
Cambridge Display Technology Limited, Cambridgeshire, GB;
General Electric Company, Schenectady, NY (US);
Abstract
A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.