The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Oct. 11, 2007
Jianping Yang, Shanghai, CN;
Jieguang Huo, Shanghai, CN;
Jianping Yang, Shanghai, CN;
Jieguang Huo, Shanghai, CN;
Abstract
The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I and region II; forming an insulation layer on the surface of the semiconductor substrate in the region I and a gate dielectric layer on the surface of the semiconductor substrate in the region II; forming a poly-silicon gate on the surface of the semiconductor substrate in the region II; forming a deep doped well in the region I through an ion implantation with high energy; performing an ion implantation with low energy in the region I and an ion implantation for lightly doped source/drain in the region II simultaneously; and forming source/drain regions in the semiconductor substrate in the region II.