The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Mar. 11, 2010
Atsuya Akiba, Kariya, JP;
Yuuichi Takeuchi, Obu, JP;
Atsuya Akiba, Kariya, JP;
Yuuichi Takeuchi, Obu, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
In a method of manufacturing a silicon carbide semiconductor device, a trench and a thickness measurement section are formed in a surface of a semiconductor substrate made of silicon carbide. The thickness measurement section includes a plurality of grooves and a protruding portion provided between the grooves so as to have a predetermined width. When an epitaxial layer made of silicon carbide is grown, a thickness of the epitaxial layer formed on the surface of the semiconductor substrate is measured by calculating a difference in height between a surface of the epitaxial layer formed on a portion of the surface of the semiconductor substrate different from the thickness measurement section and a top surface of the protruding portion. The predetermined width is less than a surface migration amount of atoms during growth of the epitaxial layer.