The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Nov. 16, 2010
Applicant:
Nobuo Kaneko, Saitama, JP;
Inventor:
Nobuo Kaneko, Saitama, JP;
Assignee:
Sanken Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on a major surface of the main semiconductor region. Between these electrodes, a gate electrode is received in a recess in the major surface of the main semiconductor region via a p-type metal oxide semiconductor film whereby a depletion zone is normally created in the electron gas layer, with a minimum of turn-on resistance and gate leak current.