The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Feb. 04, 2009
Hideki Yoshinaga, Yokohama, JP;
Hideo Mori, Yokohama, JP;
Nobutaka Ukigaya, Yokohama, JP;
Nozomu Izumi, Yokohama, JP;
Hideki Yoshinaga, Yokohama, JP;
Hideo Mori, Yokohama, JP;
Nobutaka Ukigaya, Yokohama, JP;
Nozomu Izumi, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A field-effect transistor including an electrically conductive substrate; a first insulating film coating the electrically conductive substrate; a gate electrode disposed on the electrically conductive substrate with the first insulating film interposed therebetween; a source electrode; a drain electrode opposing the source electrode with the channel therebetween; a second insulating film covering the gate electrode; and a semiconductor layer having a width larger than a width of the gate electrode in the channel width direction and being partly provided on the gate electrode with the second insulating film interposed therebetween so that the gate electrode, the second insulating film, and the semiconductor layer are laminated in the channel.