The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2011

Filed:

May. 26, 2010
Applicants:

Hiroshi Tomita, Yokohama, JP;

Tatsuhiko Koide, Yokohama, JP;

Hisashi Okuchi, Yokohama, JP;

Kentaro Shimayama, Yokohama, JP;

Hiroyasu Iimori, Yokohama, JP;

Linan Ji, Yokohama, JP;

Inventors:

Hiroshi Tomita, Yokohama, JP;

Tatsuhiko Koide, Yokohama, JP;

Hisashi Okuchi, Yokohama, JP;

Kentaro Shimayama, Yokohama, JP;

Hiroyasu Iimori, Yokohama, JP;

Linan Ji, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/312 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.


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