The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2011

Filed:

Oct. 15, 2008
Applicants:

Kotaro Nomura, Toyama, JP;

Makoto Tsutsue, Shiga, JP;

Inventors:

Kotaro Nomura, Toyama, JP;

Makoto Tsutsue, Shiga, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a semiconductor substrate; a first insulating film (third insulating film) formed on the semiconductor substrate, having a first trench (second interconnect trench), and having a composition ratio varying along the depth from an upper face of the first insulating film; and a first metal interconnect (second metal interconnect) filling the first trench (second interconnect trench). The mechanical strength in an upper portion of the first insulating film (third insulating film) is higher than that in the other portion of the insulating film (third insulating film).


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